sot-323 plastic-encapsulate transistors MMST2907A transistor (pnp) features y epitaxial planar die construction y complementary pnp type available(mmst2222a) marking:k3f maximum ratings ( t a = 25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.6 a p c collector dissipation 0.2 w t j junction temperature 150 t stg storage temperature -55 to +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =-10 a,i e =0 -60 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -60 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -100 n a collector cut-off current i ces v cb =-30v,i b =0 -100 na emitter cut-off current i ebo v eb =-3v,i c =0 -100 na h fe(1) v ce =-10v,i c =-0.1ma 75 h fe(2) v ce =-10v,i c =-1ma 100 h fe(3) v ce =-10v,i c =-10ma 100 h fe(4) v ce =-10v,i c =-150ma 100 300 dc current gain h fe(5) v ce =-10v,i c =-500ma 50 v ce(sat) i c =-150ma,i b =-15ma -0.4 v collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -1.6 v v be(sat) i c =-150ma,i b =-15ma -0.6 -1.3 v base-emitter saturation voltage v be(sat) i c =-500ma,i b =-50ma -2.6 v transition frequency f t v ce =-20v,i c =-50ma,f=100mhz 200 mhz output capacitance c ob v cb =-10v,i e =0,f=0.1mhz 8 pf input capacitance c ib v eb =-2v,i c =0,f=0.1mhz 30 pf delay time t d 10 n s rise time t r v cc =-30v,v be(off) =-1.5v,i c =-150ma i b1 ==- 15ma 40 n s storage time t s 80 n s fall time t f v cc =-30v,i c =-150ma,i b1 =-i b2 =-15ma 30 n s sot-323 1. base 2. emitter 3. collector 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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